? non-contact position sensing ? datum detection infrared light emitting diode in miniature smd package OP250 ? flat lens ? high power ? 1206 package size ? 880nm wavelength the OP250 is a gaalas infrared leds mounted in a mini ature smt package. the device incorporates a flat molded lens which enables a wide beam angle and provides an even emission pattern. this device is packaged in a 1206 size chip carrier that is compatible with most automated mounting equipment. the OP250 is mechani- cally and spectrally matched to the op520 series phototransistors. optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. optek technology inc.? 1645 wallace drive, carrollton, texas 75006 phone: (800) 341-4747 fax: (972) 323? 2396 sensors@optekinc.com www.optekinc.com a subsidiary of tt electronics plc ? machine automation ? optical encoders applications pb rohs OP250 -90 -60 -30 0 30 60 90 0% 20% 40% 60% 80% 100% relative radiant intensity angular displacement (degrees) relative radiant intensity vs. angular displacement
smd infrared led OP250 optek technology inc.? 1645 wallace drive, carrollton, texas 75006 phone: (800) 341-4747 fax: (972) 323? 2396 sensors@optekinc.com www.optekinc.com electrical characteristics (t a = 25 c unless otherwise noted) absolute maximum ratings t a = 25 o c unless otherwise noted storage temperature range -40 c to +85 c operating temperature range -25 c to +85 c lead soldering temperature 260 c (1) reverse voltage 30 v continuous forward current 50 ma power dissipation 130 mw (2) notes: 1. solder time less than 5 seconds at temperature extreme. 2. de-rate linearly at 2.17 mw/ c above 25 c. symbol parameter min max units conditions e e(apt) apertured radiant incidence 0.2 mw/cm 2 i f = 20ma (3) v f forward voltage 1.5 v i f = 20ma i r reverse current 100 a v r = 2.0v p peak emission wavelength nm i f = 10ma t r , t f rise and fall time 500 ns i f(peak) = 100ma, pw = 10s, 10% d.c. typ 890 hp emission angle at half power points 100 deg. i f = 20ma 3. e e(apt) is a measurement of the apertured radiant incidence upon a sens ing area 0.081? (2.06mm) in diameter, perpendicular to and cen- tered on the mechanical axis of the lens, and 0.590? (14.99mm) from the measurement surface. e e(apt) is not necessarily uniform within the measured area. issue 1.1 07.05 page 2 of 3 1.0 1.1 1.2 1.3 1.4 1.5 forward voltage (v) relative radiant intensity vs. forward current vs. temperature 0 10 20 30 40 50 forward current (ma) relative radiant intensity 100% 150% 200% 250% 300% 350% forward voltage vs. forward current vs. temperature 50% 0 10 20 30 40 50 forward current (ma) normalized at i f = 20ma, t a = 20 c. temperatures stepped in 20 c increments 100 c -40 c temperatures stepped in 20 c increments -40 c 100 c
smd infrared led OP250 optek technology inc.? 1645 wallace drive, carrollton, texas 75006 phone: (800) 341-4747 fax: (972) 323? 2396 sensors@optekinc.com www.optekinc.com issue 1.1 07.05 page 2 of 3 pin function 1 anode 2 cathode recommended solder pads [1.600.10] .063.0039 [1.500.10] .059.0039 [4.600.10] .181.0039 [1.600.10] .063.0039
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